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High resolution scanning electron microscope electron beam lithography (SEM-EBL) is a maskless lithography technique for creating custom patterns on an electron sensitive material. The use of “cold” source technology accounts for the high resolution (sub-10 nm features). In SEM-EBL, electrons are released from a “cold” emission source, usually a very thin, sharp tungsten needle, by passing a voltage across the tip of the needle. The released electrons are accelerated through a high electrical field gradient under high vacuum and focused into a narrow beam. The guided beam then etches a pattern in the material. SEM-EBL is used to create photomasks for lithography, in semiconductor research and development, for microarray generation, and for the creation of microfluidic devices.
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