The National Electronics and Computer Technology Center (NECTEC) established the Research and Development Center for Micro-Electronics Technology the name of which was changed to "Thai MicroElectronics Center (TMEC)" to be the center of the research and development of micro-electronics technology. In addition to providing the complete services of surface analysis and materials characterization in the class 1000 cleanroom environment such as Auger Electron Spectroscopy ( AES), Field-Emission Scanning Electron Microscope (FE-SEM), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Fluorescence (XRF).
TMEC's expertise in surface analysis, composition and contamination measurement, trace elemental analysis and microscopy can support you to advance by providing the highest quality analytical results as quickly as possible.
Auger Electron Spectroscopy (AES) is nondestructive analytical technique used to determine the elemental composition of the top 0.4- 5 nm few atomic layers of a surface or exposed interface in a solid material. AES can detect all elements (Li-U) except "H and He", and it can provide semi-quantitative information with an average detect ability limit of 0.1 to 1.0 atomic %. AES instrument with Field-Emission electron sources provide rapid characterization of sample features 8 nm Auger resolution with the highest elemental sensitivity available.
Field-Emission Scanning Electron Spectroscopy (FE-SEM) provides "high-resolution of 1.5 nm" (at 15 kV) and also excellent low kV performance with guaranteed resolution of 2.1 nm (at 1 kV).
Available the long-depth-of-field images of the sample surface and near-surface with two secondary electron detectors. In addition, there are the EDS and XRF systems.
Energy Dispersive X-ray Spectroscopy (EDS) can be used to determine the elemental composition of individual points or to map out the lateral distribution of elements from the imaged area.
X-ray Fluorescence (XRF) is a non-destructive technique that is used to quantify the elemental composition of solid samples. Peak-to-background ratios using XRF are typically up to 10 times higher than EDS values. Using this ED-ERF (Energy Dispersive X-ray Fluorescence) get its proven advantages of sensitivity and low backgrounds. These benefits mean that low concentrations, which cannot be detected using conventional electron-beam excitation, can easily be analyzed.
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