Atomic force microscope can be used to determine the surface microrelief of any substance as conductive and non-conductive. With it you can observe the structural defects localized on the studied surfaces, such as dislocations or charged defects, as well as various impurities. In addition, atomic force microscopy reveals the boundaries of different blocks in the crystal, in particular domains. In recent years, with an atomic force microscope are also intensively studied biological objects, such as DNA and other macromolecules and nanoformations on the surface of semiconductors and crystals. Our laboratory is able to use in their studies two atomic force microscope: AFM NT MDT and AFM Femtoscan, innovative research and education center for collective use "Space technology and education." These microscopes allow the study of the surface topography in a square size up to 15 μm in each direction
During ion bombardment of solids, as well as the processes of surface sputtering, ion-ion emission, generation of radiation defects and others, penetration of projectiles into the target goes on. The most common application of ion implantation is doping of semiconductors for producing of p-n junctions, heterojunctions, low-resistance contacts. Ion implantation into metals is used in order to increase their hardness, durability, corrosion resistance, etc.
Research and experiments on ion implantation are held on the accelerator HVEE-500. The main characteristics of the installation:
ion energy of 500 keV for singly charged ions
wide range of ion masses (from 1 to 250 amu)
highly stable high voltage source
small divergence and small energy spread of the ion beam
well separated ion beam
"pure" (practically, oil-free) vacuum
diameter alloyed plates - up to 100 mm
The technique of medium-energy ion scattering (MEIS) is based on the principle of Rutherford backscattering (RBS). A distinctive feature is in engaging ions with less energy than a conventional RBS, so MEIS is possible to investigate the thickness up to 200A. The measurement tools are different, too. For the analysis of backscattered ions by RBS depleted silicon detectors are used, which are limited by resolution of ~ 15keV. The method of MEIS uses ions with energies below 200 keV, which can be rejected with an electrostatic analyzer. Therefore, you can create an electrostatic analyzer with a resolution determined by the field and the size of the entrance slit. It is an mportant advantage of the electrostatic analyzer that that resolution of 15 keV RBS allows you to analyze a sample with a depth resolution of up to 200A, whereas the electrostatic analyzer allows to analyze the energy of scattered ions with a resolution of 100 eV and, therefore, to investigate the sample surface with a resolution of angstroms .
We have implemented this technique using ultra-high vacuum experimental chamber company HVEE. Electrostatic analyzer allows us to analyze backscattered ions with energies up to 130keV with a resolution of about 300eV, which is equivalent to losses in the thick gold layer 10A.
Nuclear physical technique of investigation of solids based on the application of the elastic scattering of the accelerated particles at large angles as they interact with atoms of matter. This technique is sufficiently long been used in nuclear physics to determine the composition of targets by analyzing the energy spectra of backscattered particles. Analytical capabilities of the scattering of light particles are widely used in various fields of physics and engineering, from the electronics industry to studies of structural phase transitions in high-temperature compounds.
The difference between the Rutherford (RBS) and nuclear (NOR) backscattering is cross sections of ion-atom and ion-nucleus scattering ds / dΩ. In case of RBS analysis, the cross section is proportional to Z2, so it is little for light elements like carbon. For protons with energies more than 1 MeV cross section of the elastic process can be much higher than the cross section of Rutherford scattering, due to the contribution of nuclear elastic process.
Both RBS and NOR are not sensitive to hydrogen, since the scattering cross section on hydrogen is too small. The technique of recoil nuclei, in contrast, can only be used for the study of elements that are lighter than analyzing the ion beam, in this case, the ions He +, ie for hydrogen.
Our laboratory uses all the three complementing each other ion-beam techniques to study the composition and thickness of coatings. Techniques are implemented on the accelerator HVEE AN-2500 van der Graf type of the laboratory of accelerators SINP. The main characteristics of the installation:
ion energy of 800 keV to 2000keV
using H + and He +
high stable high voltage source (0,01%),
small divergence and small energy spread of the ion beam
well the separated ion beam
Magnetron sputtering process enables to deposit films of a wide range of materials from metals to insulators with thickness varying from tens of nanometers to several microns. Deposition with magnetron sputtering is one of the standard ways for PVD microelectronic technologies. It allows you to receive layers with a controlled stoichiometry. Modes of sputtering in a constant (DC) and alternating current (RF) and mode of reactive sputtering could be realized with the system. Our laboratory provides coverage with magnetron sputtering installation of AJA company (equipment of innovation research and education center for collective use "Space technology and education"), that permits the deposition of coatings with up to three different targets of the five loaded targets. Spraying can be done in either DC or AC mode. It is also possible to produce deposition of coatings at a controlled substrate temperature (up to 750S). We have more than two ten different targets of materials of high purity.
Laboratory of Ion Beam Nanotechnologies, Skobeltsyn Institute of Nuclear Physics MSU has not received any reviews.
Laboratory of Ion Beam Nanotechnologies, Skobeltsyn Institute of Nuclear Physics MSU has not received any endorsements.