ANFF - Western Australian Node
About ANFF - Western Australian Node
The WA node is based at the University of Western Australia, Crawley. It incorporates the Microelectronics Research Group (MRG) in the School of Electrical, Electronic & Computer Engineering, led by Prof Lorenzo Faraone. The MRG provides a wealth of knowledge on advanced microelectronic, optoelectronic, and... Show more »
The WA node is based at the University of Western Australia, Crawley. It incorporates the Microelectronics Research Group (MRG) in the School of Electrical, Electronic & Computer Engineering, led by Prof Lorenzo Faraone. The MRG provides a wealth of knowledge on advanced microelectronic, optoelectronic, and photonic materials, devices and systems.
The node runs a completely vertically integrated facility, from materials growth, through device design, fabrication and testing, to packaging and subsystem assembly.
Specialist fields:
- Semiconductor optoelectronics
- II-VI semiconductor growth
- Micro- and nano- electro-mechanical-systems (MEMS and NEMS)
- Advanced sensors
Our Services (23)
Project Management
ANFF can provide consulting services to perform contract research or process engineering in the area of micro, nano and advanced materials fabrication to deliver prototypes or documented processes. Projects can be managed across each of the eight nodes of ANFF drawing on the resources of over 90 technical staff, 500 facilities and a network of academics.
ANFF can provide consulting services to perform contract research or process engineering in the area of micro, nano and advanced materials fabrication to deliver prototypes or documented processes. Projects can be managed across each of the eight nodes of ANFF drawing on the resources of over 90 technical staff, 500 facilities and a network of academics.
Electrical Testing and Characterization Services
I-V, C-V, DLTS and Hall Effect Measurement Systems are available from the WA Node of ANFF.
I-V, C-V, DLTS and Hall Effect Measurement Systems are available from the WA Node of ANFF.
Flip-Chip Bonding
Wire and flip-chip bonding facilities are available on wafers up to 2" diameter.
Wire and flip-chip bonding facilities are available on wafers up to 2" diameter.
Inductively Coupled Plasma Deposition
The WA Node has an ICP enhanced chemical vapour deposition (ICPECVD) facility available.
Outstanding features are the planar inductively coupled plasma (PTSA ICP) source, the substrate electrode with helium backside cooling and the high conductance vacuum system. These features give rise to superior film properties compared to... Show more »
The WA Node has an ICP enhanced chemical vapour deposition (ICPECVD) facility available.
Outstanding features are the planar inductively coupled plasma (PTSA ICP) source, the substrate electrode with helium backside cooling and the high conductance vacuum system. These features give rise to superior film properties compared to typical properties achieved with standard PECVD process even at deposition temperatures in the range of 90°C - 130°C. That allows to run low thermal budget processes especially necessary for passivation of devices, metallic interconnect isolation, and photoresist based lift-off technologies.
The facility can deposit Silicon Dioxide (SiO2), silicon Nitride (SiNx) or Silicon Oxynitride (SiOxNy) on wafers up to 8 inch in diameter.
MEMS Characterization
A dedicated MEMS device characterisation suite.
A dedicated MEMS device characterisation suite.
Molecular Beam Epitaxy
Molecular beam epitaxy (MBE) facility primarily used for HgCdTe. It contain a new vacuum system, high precison and stability PID controller, manipulator, RHEED gun, in-situ monitoring and X-ray diffraction and ellipsometry capabilities.
Molecular beam epitaxy (MBE) facility primarily used for HgCdTe. It contain a new vacuum system, high precison and stability PID controller, manipulator, RHEED gun, in-situ monitoring and X-ray diffraction and ellipsometry capabilities.
Photolithography
Two Mask aligners and associated facilities are available for lithography on wafers up to 6" and resolution down to 7um.
Two Mask aligners and associated facilities are available for lithography on wafers up to 6" and resolution down to 7um.
Plasma-Enhanced Chemical Vapor Deposition
Reactive Ion Etching
The RIE facility at the WA node of ANFF can etch with the following gasses: H2/CH4/He/Ar/N2/CF4
The RIE facility at the WA node of ANFF can etch with the following gasses: H2/CH4/He/Ar/N2/CF4
Thin Film Optical Characterization
Optical characterisation facilities, primarily for the measurement of thin film optical properties.
Optical characterisation facilities, primarily for the measurement of thin film optical properties.
X-Ray Diffraction
A Panalytical Empyrean XRD system, including a PIXcel 3d detector, is available for thin film and bulk material characterisation.
A Panalytical Empyrean XRD system, including a PIXcel 3d detector, is available for thin film and bulk material characterisation.
Material Testing Services
Engineering and Fabrication
Thin Film Analysis
Chemical Vapor Deposition Services
Deposition
Analytical Chemistry Services
Etching
Lithography
Chemistry and Materials
Microfabrication Services
Electronics
Fabrication and Materials Processing Services
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