ANFF - Western Australian Node

I-V, C-V, DLTS and Hall Effect Measurement Systems are available from the WA Node of ANFF.

Wire and flip-chip bonding facilities are available on wafers up to 2" diameter.

The WA Node has an ICP enhanced chemical vapour deposition (ICPECVD) facility available.

Outstanding features are the planar inductively coupled plasma (PTSA ICP) source, the substrate electrode with helium backside cooling and the high conductance vacuum system. These features give rise to superior film properties compared to typical properties achieved with standard PECVD process even at deposition temperatures in the range of 90°C - 130°C. That allows to run low thermal budget processes especially necessary for passivation of devices, metallic interconnect isolation, and photoresist based lift-off technologies.

The facility can deposit Silicon Dioxide (SiO2), silicon Nitride (SiNx) or Silicon Oxynitride (SiOxNy) on wafers up to 8 inch in diameter.

A dedicated MEMS device characterisation suite.

Molecular beam epitaxy (MBE) facility primarily used for HgCdTe. It contain a new vacuum system, high precison and stability PID controller, manipulator, RHEED gun, in-situ monitoring and X-ray diffraction and ellipsometry capabilities.

Two Mask aligners and associated facilities are available for lithography on wafers up to 6" and resolution down to 7um.

The RIE facility at the WA node of ANFF can etch with the following gasses: H2/CH4/He/Ar/N2/CF4

Optical characterisation facilities, primarily for the measurement of thin film optical properties.

A Panalytical Empyrean XRD system, including a PIXcel 3d detector, is available for thin film and bulk material characterisation.