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Advanced Circuit Engineers - ACE

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Milpitas, California, US

About Advanced Circuit Engineers - ACE

Founded: 2004 Size: 1-10 employees

Established in 2004, ACE specialists have the highest level of expertise in the industry performing FIB services on thousands of front side and flip chip packages with extremely high success rates.

FIB can be used to perform probe point creation as well as circuit edits and modifications on flip chips and... Show more »

Established in 2004, ACE specialists have the highest level of expertise in the industry performing FIB services on thousands of front side and flip chip packages with extremely high success rates.

FIB can be used to perform probe point creation as well as circuit edits and modifications on flip chips and wire bond devices.

FIB capabilities include:
• Dual Beam (FIB/SEM) precision cross sectioning
• SEM with sub-nanometer resolution
• EDS capable of low energy and light element detection, Qualitative/ Quantitative Analysis
• High resolution STEM
• Electron Transparent TEM sample prep
• Mechanical sample prep
• IC probing services
• Circuit editing on flip chips down to 14 nm technology node
• Circuit editing on flip chips down to 14 nm technology node
• Circuit editing on flip chips down to 14 nm technology node
• Circuit editing on flip chips down to 14 nm technology node

  • Precision flip chip and front side circuit edits on 20nm Cu devices using the state of the art DCG Systems OptiFIB™ and Credence IDS P3X™
  • Local de-processing
  • Low current end point detection
  • Copper selectivity over ILD low-K using Credence proprietary Cu etch

Certifications: ITAR Certified, Others available on request

Publications:

Milling High Aspect Ratio (HAR) Holes in Dielectrics: VV Makarov, RK Jain and Ted Lundquist:EFUG/ESREF 2005

Role of Circuit Edit in Post-Silicon Debug and Diagnosis: T. Malik, RK Jain, R. Nicholson, TR Lundquist: SDD 2005

Novel and Practical Method of Through Silicon FIB Editing SOI Devices: RK Jain, TR Lundquist, M Antolik, M Thompson; ISTFA 2005

Nano Patterning using a Coaxial Photon-Ion Column: RK Jain, Emiliano Faraoni; NanoFIB 2005

FIB Etching of Copper with Minimal Impact on Neighboring Circuitry including Dielectric: K. Ng, S. Motegi, RK Jain, TR Lundquist, VV Makarov; IPFA 2005

Design ECO Validation of 90nm Copper Devices Through the Silicon Backside: CC Tsao, TT Miau, RK Jain, TR Lundquist, P Vedagarbha; Electronics Manufacturing; Nov-Dec 2004

Backside Circuit Edit on Device Level - New Methodologies of Contacting Circuit Nodes: RK Jain, T Malik, T Lundquist, R Schlangen, U. Kerst, C. Boit; EFUG/ESREF 2006

Image Processing for Improved Visualization & Endpoint Detection: T Lundquist, D Renard, RK Jain, M Phaneuf, K Lagarec; EFUG/ESREF 2006

Advanced Fringe Analysis Techniques: RK Jain, T Malik, TR Lundquist, CC Tsao, WJ Walecki; ISTFA 2006

回路修正のトレンチ加工時に観察される干渉縞の解析: S.Motegi, RK Jain, T Malik, TR Lundquist, CC Tsao; LSI Testing Symposium 2006

New Circuit Edit and Probing Options directly to FET Device on Ultra Thin Silicon Backside processed by Focused Ion Beam: R. Schlangen, U. Kerst, C. Boit, RK Jain, T. Malik, T. Lundquist; SDD 07

Novel Flip-Chip Probing Methodology Using Electron Beam Probing: R.K. Jain, T. Malik, T. Lundquist, R. Schlangen, R. Leihkauf, U. Kerst, C. Boit; IPFA 2007

Non Destructive 3D Chip Inspection with Nano Scale Potential by use of Backside FIB and Backscattered Electron Microscopy: R. Schlangen, U. Kerst. C. Boit, T. Malik, RK Jain, T. Lundquist; ESREF 2007

FIB backside circuit modification on device level allowing to access every Circuit node with minimum impact on device performance by use of Atomic Force Probing: R. Schlangen, U. Kerst. C. Boit, T. Malik, RK Jain, T. Lundquist, S. Schömann, B. Krüger; ISTFA 2007

Deposition of Narrow, High Quality, Closely Spaced, but Isolated Conductors: VV Makarov, RK Jain; ISTFA 2007 Effects of Backside Circuit Edit on Transistor Characteristics: RK Jain, T Malik, TR Lundquist, QS Wang, R. Schlangen, U. Kerst, C. Boit; ISTFA 2007

Backside E-beam Probing on Nano Scale Devices: R. Schlangen, U. Kerst, C. Boit, RK Jain, T. Lundquist, B. Krüger Characterization of Low Resistivity FIB Edit Via Filling for Analog Applications: S. Motegi, RK Jain, VV Makarov; LSI Testing symposium '07

Effect of Backside, Through Si, Editing on Performance of Transistors: H. Tanaka, RK Jain, T. Lundquist, S. Wang; LSI Testing Symposium '07

D. K. Chan and S. F. Misquitta, "Focused Ion Beam Analysis of Thermal Asperities in MR Hard Disk Drives," Datatech, 3, 129, 1999.

D. K. Chan, S. F. Misquitta, J. F. Ying, C. C. Martner, and B. D. Hermsmeier, "Chemical Depth Profiling on Submicron Regions: a Combined Focused Ion Beam/Scanning Electron Microscope Approach," Surface and Interface Analysis, 27, 199, 1999.

M. Antolik, S. Misquitta, T. Lundquist, "Recent Advances in the Direct Mechanical Micro-Probing of IC Transistors, ", LSI Testing& Symposium, Osaka , Japan , 2000.

V. V. Makarov, L. Krasnobayev, S. Misquitta, “Novel Dielectric Etch Chemistry for the next generation of Circuit Edit : Delicate to Low-k Dielectrics and Silicon”, ISTFA 2009.

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Our Services (7)


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Focused Ion Beam Lithography

Price on request

Cross-section
De-passivation
Mechanical and E-beam probe points

Cross-section
De-passivation
Mechanical and E-beam probe points

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Circuit Fabrication

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Fabrication and Materials Processing Services

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Electronic Manufacturing

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Engineering and Fabrication

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Microfabrication Services

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Lithography

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